Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 19 of 82

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Q181.
Silicon diodes have __________ reverse resistance than germanium diodes.
Discuss
Answer: (b).a much larger
Q182.
The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on
Discuss
Answer: (b).wavelength of the incident radiation
Discuss
Answer: (d).potential barrier is raised
Discuss
Answer: (d).It explain all the regions of the device characteristics
Discuss
Answer: (c).800 to 1300 m-ohm-cm
Q186.
Which of the following is anti-ferromagnetic material?
Discuss
Answer: (d).All of the above
Q187.
Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode.

Reason (R): A PIN diode has an intrinsic layer between p and n regions.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q188.
In the saturation region of CE output characteristics of n-p-n transistor, VCE is about
Discuss
Answer: (a).0.5 V
Discuss
Answer: (a).ID and VDS are positive but VGS is negative
Q190.
An intrinsic semiconductor (intrinsic electron density = 10¹โถ m¯³) is deped with donors to a level of 10²² m¯³. What is the hole density assuming all donors to be ionized?
Discuss
Answer: (d).10โถ m¯³