Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 19 of 82

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Q181.
Figure represents a
Discuss
Answer: (c).Varactor
Q182.
The O/P char, of a FET is given in the figure. In which region is the device biased for small signal amplification?
Discuss
Answer: (b).BC
Q183.
The current in a p-n junction diode with V volts applied in p region relative to n region (where I0 is reverse saturation current, m is ideality factor, k is Boltzmann's constant, T is absolute temp and q is charge on electron) is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q184.
In the BJT amplifier shown in the figure is the transistor is biased in the forward active region. Putting a capacitor across RE will
Discuss
Answer: (b).increase the voltage gain and decrease the I/P Impedance
Q185.
An electron rises through a voltage of 100 V. The energy acquired by it will be
Discuss
Answer: (a).100 eV
Discuss
Answer: (b).type of conductivity and concentration of charge carriers
Q187.
Which of these has 3 layers?
Discuss
Answer: (a).PIN diode
Q188.
For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10¯³A/V², VGS = -4V, VT = -2V, Voltage equivalent at 27°C = 26 mV.
Discuss
Answer: (b).1.11 mA
Q189.
The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same temperature and at 2 MHz, the skin depth would be approximately
Discuss
Answer: (a).47 ฮผm
Q190.
When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.
Discuss
Answer: (b).False