Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 19 of 82

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Q181.
The relation between plate current and plate voltage of a vacuum diode is called
Discuss
Answer: (b).Langmuir Child law
Q182.
Given that the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for e¯-hole pair generation will be
Discuss
Answer: (c).5400 Å
Discuss
Answer: (d).high input impedance and low voltage gain
Discuss
Answer: (a).ac property of the device at desired operating point
Q185.
What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor?

1. Emitter diffusion
2. Base diffusion
3. Buried layer formation
4. E pi-layer formation

Select the correct answer using the codes given below:
Discuss
Answer: (d).4, 3, 2, 1
Q186.
For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will
Discuss
Answer: (a).remain unchanged
Discuss
Answer: (d).all of the above
Q188.
The probability giving distribution of electrons over a range of allowed energy levels is known as
Discuss
Answer: (b).Fermi-Dirac Distribution
Q189.
Hall coefficient is reciprocal of charge density.
Discuss
Answer: (a).True
Q190.
Under low level injection assumption, the infected minority carrier current for an extrinsic semiconductor is essentially the
Discuss
Answer: (a).diffusion current