Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 19 of 82

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Q181.
Donor energy level is n type semiconductor is very near valence band.
Discuss
Answer: (b).False
Q182.
GaAs has an energy gap 1.43 eV the optical cut off wavelength of GaAs would lie in the
Discuss
Answer: (b).infrared region of the spectrum
Discuss
Answer: (a).is almost constant
Discuss
Answer: (a).tuning
Q185.
One eV = 1.602 x 10¯¹โน joules.
Discuss
Answer: (a).True
Q186.
Assertion (A): When VDS is more than rated value the drain current in a JFET is very high.

Reason (R): When VDS is more than rated value, avalanche breakdown occurs.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q187.
If ib is plate current, eb is plate voltage and ec is grid voltage the v-i curve of a vacuum triode is ib = 0.003 (eb + kec)โฟ. Typical values of k and n are
Discuss
Answer: (d).30 and 1.5
Q188.
Electrons can be emitted from a metal surface due to high electric field.
Discuss
Answer: (a).True
Q189.
In an n type semiconductor the fermi level is 0.35 eV below the conduction band, the concentration of donor atoms is increased to three times. The new position of Fermi level will be
Discuss
Answer: (b).about 0.32 eV below conduction band
Q190.
Assertion (A): In a BJT, the base region is very thick.

Reason (R): In p-n-p transistor most of holes given off by emitter diffuse through the base.
Discuss
Answer: (d).A is false but R is true