Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 22 of 82

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Q211.
Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

Reason (R): Diffusion of carriers occurs in semiconductors.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q212.
Consider the following statements about diamagnetic material and diamagnetism.

1. The materials have negative magnetic susceptibility.
2. At very low temperature diamagnetic materials.

Which of the statements given above is/are correct?
Discuss
Answer: (a).1 only
Discuss
Answer: (a).coating the cathode ray by an active materials
Discuss
Answer: (d).silver, copper, gold, aluminium
Q215.
An electron rises through a voltage of 100 V. The energy acquired by it will be
Discuss
Answer: (a).100 eV
Discuss
Answer: (b).type of conductivity and concentration of charge carriers
Q217.
Which of these has 3 layers?
Discuss
Answer: (a).PIN diode
Q218.
For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10¯³A/V², VGS = -4V, VT = -2V, Voltage equivalent at 27°C = 26 mV.
Discuss
Answer: (b).1.11 mA
Q219.
The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same temperature and at 2 MHz, the skin depth would be approximately
Discuss
Answer: (a).47 ฮผm
Q220.
When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.
Discuss
Answer: (b).False