Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 22 of 82

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Q211.
Which of the following can be operated with positive as well as negative gate voltage?
Discuss
Answer: (c).MOSFET
Q212.
The reverse breakdown voltage of a diode depends on the extent of doping.
Discuss
Answer: (a).True
Discuss
Answer: (b).decreases as the temperature increases
Q214.
The voltage at which Avalanche occurs is known as
Discuss
Answer: (c).breakdown voltage
Discuss
Answer: (a).opaque to visible light
Q216.
In intrinsic semiconductor the increase in conductivity per degree increase in temperature is about
Discuss
Answer: (b).6%
Q217.
The ripple factor for a bridge rectifier is
Discuss
Answer: (b).1.21
Q218.
In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap and one of the ends of the secondary. The maximum voltage across the reverse biased diode will be
Discuss
Answer: (a).100 V
Q219.
Consider the following statements.
The functions of an oxide layer in an IC device is to

1. mask against diffusion or ion implant
2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer

Of these statements, which are true.
Discuss
Answer: (d).1, 2, 4
Q220.
The forbidden energy gap for germanium is
Discuss
Answer: (c).0.72 eV