Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 22 of 82

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Q211.
Assertion (A): A BJT can be used as a switch.

Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Discuss
Answer: (b).inversely proportional to doping concentration
Q213.
The mean life time of the minority carriers is in the range of a few
Discuss
Answer: (d).nano seconds
Q214.
Choose the correct match for input resistance of various amplifier configurations shown below configuration.

CB : Common Base LO : Low
CC : Common Collector โ€‚ MO : moderate
CE : Common Emitter HI: High
Discuss
Answer: (b).CB-LO, CC-HI, CE-MO
Discuss
Answer: (a).is nearly equal to density of donor atoms
Q216.
If both emitter base and collector base junctions of a BJT are forward biased, the transistor is in
Discuss
Answer: (b).saturated region
Q217.
Which of the following can be operated with positive as well as negative gate voltage?
Discuss
Answer: (c).MOSFET
Q218.
The reverse breakdown voltage of a diode depends on the extent of doping.
Discuss
Answer: (a).True
Discuss
Answer: (b).decreases as the temperature increases
Q220.
The voltage at which Avalanche occurs is known as
Discuss
Answer: (c).breakdown voltage