Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 22 of 82

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Q211.
Dielectric strength of polythene is around
Discuss
Answer: (b).40 kV/mm
Discuss
Answer: (b).more than that of annealed copper
Discuss
Answer: (d).either p or n type material
Q214.
In a bipolar junction transistor ฮฑdc = 0.98, ICO= 2 ฮผA and 1B = 15 ฮผA. The collector current IC is
Discuss
Answer: (b).735 mA
Q215.
The voltage across the secondary of the transformer in a half wave rectifier with a shunt capacitor filter is 50 volts. The maximum voltage that will occur on the reverse biased diode will be
Discuss
Answer: (a).100 V
Q216.
As temperature increases the forbidden gap in silicon increases.
Discuss
Answer: (b).False
Q217.
Assertion (A): Germanium is more commonly used than silicon.

Reason (R): Forbidden gap in germanium is less than that in silicon.
Discuss
Answer: (d).A is false but R is true
Q218.
Which of the following devices has substrate?
Discuss
Answer: (d).Both (b) and (c)
Q219.
Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.

Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.
Discuss
Answer: (c).A is true but R is false
Discuss
Answer: (a).is in the valence band