Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 18 of 82

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Q171.
If ib is plate current, eb is plate voltage and ec is grid voltage the v-i curve of a vacuum triode is ib = 0.003 (eb + kec)โฟ. Typical values of k and n are
Discuss
Answer: (d).30 and 1.5
Q172.
Electrons can be emitted from a metal surface due to high electric field.
Discuss
Answer: (a).True
Q173.
In an n type semiconductor the fermi level is 0.35 eV below the conduction band, the concentration of donor atoms is increased to three times. The new position of Fermi level will be
Discuss
Answer: (b).about 0.32 eV below conduction band
Q174.
Assertion (A): In a BJT, the base region is very thick.

Reason (R): In p-n-p transistor most of holes given off by emitter diffuse through the base.
Discuss
Answer: (d).A is false but R is true
Q175.
The fT of a BJT is related to its gm, Cฯ€ and Cฮผ as follows.

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q176.
Figure represents a
Discuss
Answer: (c).Varactor
Q177.
The O/P char, of a FET is given in the figure. In which region is the device biased for small signal amplification?
Discuss
Answer: (b).BC
Q178.
The current in a p-n junction diode with V volts applied in p region relative to n region (where I0 is reverse saturation current, m is ideality factor, k is Boltzmann's constant, T is absolute temp and q is charge on electron) is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q179.
In the BJT amplifier shown in the figure is the transistor is biased in the forward active region. Putting a capacitor across RE will
Discuss
Answer: (b).increase the voltage gain and decrease the I/P Impedance
Q180.
Figure shows small signal common base transistor circuit.The current source I and resistor R on the output side are

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D