Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 18 of 82

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Q171.
Electric breakdown strength of a material depends on its
Discuss
Answer: (d).all of the above
Discuss
Answer: (c).the number of protons and neutrons
Discuss
Answer: (b).equal to the change of an electron
Q174.
In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about
Discuss
Answer: (c).1.45 x 10¹แดผ per cm³
Discuss
Answer: (b).less number of electron hole pairs will be generated in silicon than in germanium at room temperature
Q176.
Which of the following semi-conductor has forbidden energy gap less 1 eV?
Discuss
Answer: (c).Germanium
Q177.
In the vacuum diode equation ib = keb^1.5, the current is
Discuss
Answer: (b).space charge limited current
Q178.
Thermosetting polymers are
Discuss
Answer: (c).cast moulded
Q179.
Which of these is used in seven segment display?
Discuss
Answer: (b).LED
Q180.
Consider the following statement S1 and S2.

S1: The ฮฒ of a bipolar transistor reduces if the base width is increased.
S2: the ฮฒ of a bipolar transistor increases if the doping concentration in the base is increased.

Which one of the following is correct?
Discuss
Answer: (d).S1 is true, S2 is false