Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 21 of 82

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Q201.
When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.
Discuss
Answer: (b).False
Q202.
In which material do conduction and valence bands overlap
Discuss
Answer: (b).conductors
Q203.
For a photoconductor with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in illumination results in
Discuss
Answer: (c).a decrease in resistance
Q204.
The number of p-n junctions in a semiconductor diode are
Discuss
Answer: (b).1
Q205.
Assertion (A): A high junction temperature may destroy a diode.

Reason (R): As temperature increases the reverse saturation current increases.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q206.
A Si sample is doped with a fixed number of group N impurities. The electron density n is measured from 4 K to 1200 k for the sample. Which one of the following is correct?
Discuss
Answer: (b).n increases monotonicaliy with increasing temp
Q207.
Assertion (A): In design of circuit using BJT, a derating factor is used.

Reason (R): As the ambient temperature increases, heat dissipation becomes slower.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q208.
If the drift velocity of holes under a field gradient of 100 V/m is 5m/sec. Their mobility is
Discuss
Answer: (a).0.05
Q209.
In a P type silicon sample, the hole concentration is 2.25 x 10¹โต / cm³. If the intrinsic carrier concentration is 1.5 x 10¹แดผ/ cm³ the electron concentration is
Discuss
Answer: (c).10โต/cm³
Q210.
The behaviour of a JFET is similar to that of
Discuss
Answer: (d).Vacuum triode