Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 23 of 82

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Q221.
Consider the following statements: The function of oxide layer in an IC device is to

1. mask against diffusion or non implant
2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer

Of these statements:
Discuss
Answer: (d).1, 2, 4 are correct
Q222.
An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurity atoms. The number of electrons and holes is
Discuss
Answer: (c).3 million free electrons and very small number of holes
Q223.
In a reverse biased p-n junction, the reverse bias is 4V. The junction capacitance is about
Discuss
Answer: (d).20 pF
Discuss
Answer: (c).semiconductors
Q225.
Assertion (A): Oxide coated cathodes are very commonly used.

Reason (R): Work function of oxide coated cathode is 1 eV whereas it is 4.5 eV for pure tungsten.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (b).causes a large increase in reverse saturation current
Q227.
An air gap provided in the iron core of an inductor prevents
Discuss
Answer: (c).core saturation
Q228.
Generally, the gain of a transistor amplifier falls at high frequency due to the
Discuss
Answer: (a).internal capacitance of the device
Q229.
Which of these has a layer of intrinsic semiconductor?
Discuss
Answer: (b).PIN diode
Q230.
Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded.

Reason (R): A high inverse voltage can destroy a p-n junction.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A