Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 23 of 82

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Q221.
The current gain of a BJT is
Discuss
Answer: (c).gm rp
Discuss
Answer: (b).a non-linear B-H behaviour
Discuss
Answer: (c).is due to thermally generated minority carriers
Q224.
In P-N junction, the region containing the uncompensated acceptor and donor ions is called
Discuss
Answer: (b).depletion region
Discuss
Answer: (b).minority carriers
Q226.
Consider the following statements:

1. Acceptor level lies close the valence band.
2. Donor level lies close to the valence band.
3. n type semiconductor behaves as an insulator at 0 K.
4. p type semiconductor behaves as an insulator at 0 K.

Of these statements:
Discuss
Answer: (c).1 and 4 are correct
Discuss
Answer: (d).either p or n type material
Q228.
In a bipolar junction transistor ฮฑdc = 0.98, ICO= 2 ฮผA and 1B = 15 ฮผA. The collector current IC is
Discuss
Answer: (b).735 mA
Q229.
The voltage across the secondary of the transformer in a half wave rectifier with a shunt capacitor filter is 50 volts. The maximum voltage that will occur on the reverse biased diode will be
Discuss
Answer: (a).100 V
Q230.
As temperature increases the forbidden gap in silicon increases.
Discuss
Answer: (b).False