Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 23 of 82

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Q221.
Assertion (A): In design of circuit using BJT, a derating factor is used.

Reason (R): As the ambient temperature increases, heat dissipation becomes slower.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q222.
If the drift velocity of holes under a field gradient of 100 V/m is 5m/sec. Their mobility is
Discuss
Answer: (a).0.05
Q223.
In a P type silicon sample, the hole concentration is 2.25 x 10¹โต / cm³. If the intrinsic carrier concentration is 1.5 x 10¹แดผ/ cm³ the electron concentration is
Discuss
Answer: (c).10โต/cm³
Q224.
The behaviour of a JFET is similar to that of
Discuss
Answer: (d).Vacuum triode
Q225.
Dielectric strength of polythene is around
Discuss
Answer: (b).40 kV/mm
Discuss
Answer: (b).more than that of annealed copper
Discuss
Answer: (d).either p or n type material
Q228.
In a bipolar junction transistor ฮฑdc = 0.98, ICO= 2 ฮผA and 1B = 15 ฮผA. The collector current IC is
Discuss
Answer: (b).735 mA
Q229.
The voltage across the secondary of the transformer in a half wave rectifier with a shunt capacitor filter is 50 volts. The maximum voltage that will occur on the reverse biased diode will be
Discuss
Answer: (a).100 V
Q230.
As temperature increases the forbidden gap in silicon increases.
Discuss
Answer: (b).False