Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 27 of 82

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Q261.
In a triode the potential of grid (with respect to cathode) is usually
Discuss
Answer: (b).negative
Discuss
Answer: (a).reverse biased
Discuss
Answer: (c).an ohmic region at low voltage value and a saturation region at high voltage
Discuss
Answer: (b).half cycle of the input signal
Q265.
In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that
Discuss
Answer: (a).E > B > C
Q266.
The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier will be nearly
Discuss
Answer: (b).350 VA
Q267.
When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.
Discuss
Answer: (a).True
Q268.
Which of the following is known as insulated gate FET?
Discuss
Answer: (b).MOSFET
Q269.
Assertion (A): The hybrid ฯ€ model of a transistor can be reduced to h parameter model and vice versa.

Reason (R): Hybrid ฯ€ and h parameter models are interrelated as both of them describe the same device.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q270.
Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?
Discuss
Answer: (b).Boron