Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 29 of 82

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Q281.
Consider the following circuit configuration

1. common Emitter
2. common Base
3. emitter follower
4. emitter follower using Darlington pair.

The correct sequence in increasing order of I/P impedance of these configuration:
Discuss
Answer: (b).1, 2, 4, 3
Q282.
Assertion (A): Field emission is substantially independent of temperature.

Reason (R): When a high electric field is created at metal surface field emission may occur.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Discuss
Answer: (c).thermal capacity of the resistor
Discuss
Answer: (d).to grow Selectivity single crystal P doped silicon of one resistivity on a P type substrate of a different resistivity
Q285.
The mean life time of carrier may range from 10¯โน seconds to hundreds of ฮผ-seconds.
Discuss
Answer: (a).True
Q286.
In which mode of BJT operation are both junctions forward biased?
Discuss
Answer: (b).Saturation
Discuss
Answer: (b).more free electrons than holes in the semiconductor
Q288.
The ratio of diffusion constant for hole DP to the mobility for holes is proportional to
Discuss
Answer: (b).T
Q289.
The carrier mobility in a semiconductor is 0.4 m²/Vs. Its diffusion constant at 300k will be (in m²/s).
Discuss
Answer: (b).0.16
Q290.
During induction heating of metals which of the following is abnormally high?
Discuss
Answer: (a).Frequency