Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 31 of 82

Discover more Topics under Electronics and Communication Engineering

Q301.
Barkhausen criterion of oscillation is
Discuss
Answer: (b).Aฮฒ = 1
Q302.
In a p-n-p transistor the main current carriers and the mechanism of flow respectively are
Discuss
Answer: (c).holes, diffusion
Q303.
Secondary emission occurs in
Discuss
Answer: (c).tetrode
Q304.
In common base connection, the output characteristics of a bipolar junction transistor is drawn between
Discuss
Answer: (a).IC and VCB
Q305.
In fabricating silicon BJT in ICs by the epitaxial process, the number of diffusions used is usually

a.

2

b.

3

c.

4

d.

6

Discuss
Answer: (d).6
Q306.
For generating 1 MHz frequency signal, the most suitable circuit is
Discuss
Answer: (c).colpitt's oscillator
Discuss
Answer: (d).extrinsic semi-conductor
Q308.
In n type MOSFET, the substrate
Discuss
Answer: (a).is p type
Q309.
The first and the last critical frequency of an RC driving point impedance function must respectively by
Discuss
Answer: (a).a zero and a pole
Discuss
Answer: (b).concentration gradient of charge carrier