Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 28 of 82

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Discuss
Answer: (c).either (a) or (b) above
Discuss
Answer: (a).due to rapture of covalent band
Q273.
Which rectifier has the best ratio of rectification?
Discuss
Answer: (d).Three phase full wave rectifier
Q274.
Assertion (A): A p-n junction is used as rectifier.

Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q275.
In an integrated circuit the SiOβ‚‚ layers provide
Discuss
Answer: (c).isolation
Q276.
For a n-channel JFET with rβ‚€ = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by
Discuss
Answer: (a).40 kΞ©
Q277.
Which of the following are voltage controlled devices?
Discuss
Answer: (d).Both (a) and (b)
Q278.
In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.
Discuss
Answer: (a).True
Discuss
Answer: (c).conducts in forward direction only
Discuss
Answer: (c).heavily doped polycrystalline silicon