Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 28 of 82

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Q271.
When a large number of atoms are brought together to form a crystal

a.

the energy levels of inner shell electrons are affected appreciably by the presence of other neighbouring atoms.

b.

The energy levels of outer shell electrons are affected appreciably by the presence of other neighbouring atoms.

c.

the energy levels of both inner and outer shell electrons are affected appreciably by the presence of other neighbouring atoms.

d.

none of the above.

Discuss
Answer: (b).The energy levels of outer shell electrons are affected appreciably by the presence of other neighbouring atoms.
Q272.
What is the effect of cut in voltage on the wave form of output as compared to input in a semiconductor diode?

a.

The duration of output waveform is less than 180°

b.

Output voltage is less than input voltage

c.

Output voltage is more than input voltage

d.

Both (a) and (b)

Discuss
Answer: (d).Both (a) and (b)
Q273.
As temperature increases the number of free electrons and holes in an intrinsic semiconductor

a.

increases

b.

decreases

c.

remains the same

d.

may increase or decrease

Discuss
Answer: (a).increases
Q274.
At room temperature kT = 0.03 eV.

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (a).True
Q275.
Assertion (A): A JFET behaves as a resistor when VGS < VP.

Reason (R): When VGS < VP, the drain current in a JFET is almost constant.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (c).A is true but R is false
Q276.
In a reverse biased P-N junction, the current through the junction increases abruptly at

a.

zero voltage

b.

1.2 V

c.

0.72 V

d.

breakdown voltage

Discuss
Answer: (d).breakdown voltage
Q277.
As comparated to an ordinary p-n diode, the extent of impurity atoms in a tunnel diode

a.

is more

b.

is less

c.

may be more or less

d.

is almost the same

Discuss
Answer: (a).is more
Q278.
In active filter circuits, inductances are avoided mainly because they

a.

are always associated with some resistance

b.

are bulky and unsuitable for miniaturisation

c.

are non-linear in nature

d.

saturate quickly

Discuss
Answer: (b).are bulky and unsuitable for miniaturisation
Q279.
When a p-n-p transistor is operating in active region, the current in the n region is due to

a.

only holes

b.

only electrons

c.

mainly holes

d.

mainly electrons

Discuss
Answer: (c).mainly holes
Q280.
In a JFET

a.

drain current is very nearly equal to source current

b.

drain current is much less than source current

c.

drain current may be equal to or less than source current

d.

drain current may be even more than source current

Discuss
Answer: (a).drain current is very nearly equal to source current
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