Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 25 of 82

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Q241.
Assertion (A): In a BJT, ฮฑdc is about 0.98.

Reason (R): In a BJT, recombination in base region is high.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (c).both +ve, -ve feedback
Q243.
Which of the following material is preferred for transformer cores operating in micro wave frequency range?
Discuss
Answer: (a).Ferrites
Q244.
The ac resistance of a forward biased p-n junction diode operating at a bias voltage V and carrying current 'I' is
Discuss
Answer: (c).V/I
Discuss
Answer: (c).energy of the atom is increased
Q246.
In an insulated gate FET, the polarity of inversion layer is the same as that of
Discuss
Answer: (b).majority carriers in source
Q247.
Hall effect can be used to find the type of semiconductor.
Discuss
Answer: (a).True
Q248.
The conductivity of germanium increases by about 6 percent per degree increase in temperature.
Discuss
Answer: (a).True
Discuss
Answer: (c).4000 to 7700 Å
Q250.
Which of the following materials has the highest electrical conductivity?
Discuss
Answer: (b).Silver