Electronic Devices and Circuits MCQs
Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.
In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.
Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!
So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!
Electronic Devices and Circuits MCQs | Page 24 of 82
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Reason (R): Forbidden gap in germanium is less than that in silicon.
Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.
1. mask against diffusion or non implant
2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer
Of these statements:
Reason (R): Work function of oxide coated cathode is 1 eV whereas it is 4.5 eV for pure tungsten.