Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 26 of 82

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Q251.
Assertion (A): A JFET behaves as a resistor when VGS < VP.

Reason (R): When VGS < VP, the drain current in a JFET is almost constant.
Discuss
Answer: (c).A is true but R is false
Q252.
In a reverse biased P-N junction, the current through the junction increases abruptly at
Discuss
Answer: (d).breakdown voltage
Q253.
As comparated to an ordinary p-n diode, the extent of impurity atoms in a tunnel diode
Discuss
Answer: (a).is more
Discuss
Answer: (b).are bulky and unsuitable for miniaturisation
Q255.
When a p-n-p transistor is operating in active region, the current in the n region is due to
Discuss
Answer: (c).mainly holes
Discuss
Answer: (a).drain current is very nearly equal to source current
Q257.
Fermi level in intrinsic semiconductor is at the centre of forbidden energy band.
Discuss
Answer: (a).True
Q258.
In a photo transistor the photocurrent is
Discuss
Answer: (b).collector base junction
Q259.
In photoelectric emission the maximum kinetic energy of emitted electron is proportional to
Discuss
Answer: (b).f
Q260.
Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resulting electric field inside the speciment will be in
Discuss
Answer: (a).direction normal to both current and magnetic field