Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

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Electronic Devices and Circuits MCQs | Page 34 of 82

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Q331.
In a bipolar transistor which current is smallest

a.

collector current

b.

base current

c.

emitter current

d.

any of the three currents

Discuss
Answer: (b).base current
Q332.
With increasing temperature, the electrical conductivity of metals

a.

increases

b.

decreases

c.

increases first and then decreases

d.

remains unaffected

Discuss
Answer: (b).decreases
Q333.
The reverse saturation current in a semiconductor diode consists of

a.

avalanche current

b.

zener current

c.

minority carrier current

d.

minority carrier current and surface leakage current

Discuss
Answer: (d).minority carrier current and surface leakage current
Q334.
The current gain of a transistor is the ratio of

a.

emitter current to base current

b.

emitter current to collector current

c.

collector current to base current

d.

collector current to emitter current

Discuss
Answer: (c).collector current to base current
Q335.
If a sample of Ge and a sample of Si have the same impurity density are kept at room temperature

a.

both will have equal value of resistivity

b.

both will have equal - ve of resistivity

c.

resistivity of germanium will be higher than that of silicon

d.

resistivity of silicon will be higher than of Ge

Discuss
Answer: (d).resistivity of silicon will be higher than of Ge
Q336.
Photoelectric emitters in photo tubes are generally made of

a.

alkali metals

b.

metals

c.

semiconductors

d.

metal and semiconductors

Discuss
Answer: (a).alkali metals
Q337.
Assertion (A): Power transistors are more commonly of silicon npn type.

Reason (R): The fabrication of silicon npn transistors is easy.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q338.
In N-type semiconductor

a.

electrons are majority carriers while holes are minority carriers

b.

electrons are majority carriers while holes are majority carriers

c.

both electrons as well as holes are majority carriers

d.

both electrons as well as holes are minority carriers

Discuss
Answer: (a).electrons are majority carriers while holes are minority carriers
Q339.
The addition of n type impurity to intrinsic material creates allowable energy levels.

a.

slightly below conduction band

b.

slightly above conduction band

c.

slightly below valence band

d.

slightly above valence band

Discuss
Answer: (a).slightly below conduction band
Q340.
Which of the following elements act as donor impurities?

1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium

Select the correct answer using the codes given below:

a.

1, 2, 3

b.

1, 2, 4, 6

c.

3, 4, 5, 6

d.

1, 4, 5

Discuss
Answer: (d).1, 4, 5
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