Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 37 of 82

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Q361.
The maximum rectification efficiency in case of full wave rectifier is
Discuss
Answer: (b).81.2%
Q362.
For a full wave bridge rectifier supplied with 50 Hz a.c., the lowest ripple frequency will be
Discuss
Answer: (b).100 Hz
Q363.
When an electron rises through a potential of 100 V it will acquired an energy of
Discuss
Answer: (a).100 eV
Q364.
Which one of the following gain equations is correct for a MOSFET common-source amplifier?

(gm is mutual conductance, and RD is load resistance at the drain)
Discuss
Answer: (b).AV = gm/RD
Q365.
If 1 kVA transformer is used for all of the following rectifiers, the d.c. power availability will be least in case of
Discuss
Answer: (d).three phase full wave rectifier
Q366.
In which of the following does a negative resistance region exist in the v-i characteristics?
Discuss
Answer: (c).Tunnel diode
Q367.
The intrinsic resistivity of silicon at 300 K is about
Discuss
Answer: (d).230000 ฮฉ-cm
Discuss
Answer: (d).Potential barrier is decreased
Q369.
A differential amplifier is invariably used in the I/P stage of all OP-amps. This is done basically to produce the OP-amp with a very high.
Discuss
Answer: (d).open-loop gain
Q370.
The addition of impurity in extrinsic semiconductor is about 1 part in 10โธ parts.
Discuss
Answer: (a).True