Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 40 of 82

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Q391.
The depletion layer consists of immobile ions.
Discuss
Answer: (a).True
Discuss
Answer: (c).an ohmic region at low voltage value followed by a saturation region at higher voltages.
Q393.
A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to
Discuss
Answer: (c).increase its speed of operation
Q394.
Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band.

Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q395.
The drift velocity of electrons and holes is proportional to electric field strength.
Discuss
Answer: (a).True
Discuss
Answer: (a).to negative terminal of battery
Q397.
Piezoelectric materials serves as a source of
Discuss
Answer: (b).ultrasonic waves
Q398.
Pentavalent impurity creates n type semiconductor.
Discuss
Answer: (a).True
Discuss
Answer: (a).both junctions are forward biased
Q400.
Indium, aluminium, arsenic are all p type impurities.
Discuss
Answer: (b).False