Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

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Electronic Devices and Circuits MCQs | Page 44 of 82

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Q431.
To ensure that a zener diode does not get destroyed

a.

the applied voltage should not exceed breakdown voltage

b.

the current should not exceed rated current

c.

the current should be less than magnitude of barrier potential

d.

both (a) and (b)

Discuss
Answer: (b).the current should not exceed rated current
Q432.
Recombination produces new electron-hole pairs

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (b).False
Q433.
An amplifier without feedback has a voltage gain of 50, input resistance of 1 kฮฉ and output resistance of 2.5 kฮฉ. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is

a.

1/11 kฮฉ

b.

1/5 kฮฉ

c.

5 kW

d.

11 kW

Discuss
Answer: (a).1/11 kฮฉ
Q434.
As compared to an ordinary semiconductor diode, a Schottky diode

a.

has lower cut in voltage

b.

has higher cut in voltage

c.

lower reverse saturation current

d.

both (b) and (c)

Discuss
Answer: (a).has lower cut in voltage
Q435.
Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
Reason (R): High reverse voltage causes Avalanche effect.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q436.
As compared to an ordinary semiconductor diode, a Schottky diode

a.

has higher reverse saturation current

b.

has higher reverse saturation current and higher cut in voltage

c.

has higher reverse saturation current and lower cut in voltage

d.

has lower reverse saturation current and lower cut in voltage

Discuss
Answer: (c).has higher reverse saturation current and lower cut in voltage
Q437.
SCR turns of from conducting state to blocking state on

a.

reducing gate current

b.

reversing gate voltage

c.

reducing anode current below holding current value

d.

applying ac to the gate

Discuss
Answer: (c).reducing anode current below holding current value
Q438.
The kinetic energy of free electrons in a metal is (where k is the de-Broglie wave number of the electron)

a.

inversely proportional to k

b.

inversely proportional to square of k

c.

proportional to k

d.

proportional to the square of k

Discuss
Answer: (b).inversely proportional to square of k
Q439.
The turn on time of an SCR is 5 micro second. Its trigger pulse should have

a.

short rise time with pulse width = 2.5 ฮผs

b.

long rise time with pulse width = 3 ฮผs

c.

short rise time with pulse width = 4 ฮผs

d.

long rise time with pulse width = 4 ฮผs

Discuss
Answer: (c).short rise time with pulse width = 4 ฮผs
Q440.
From an n channel JFET for VDS constant and if VGS is made more negative, pinch off would occur at

a.

higher value of drain current

b.

saturation value of drain current

c.

zero drain current

d.

gate current equal to drain current

Discuss
Answer: (c).zero drain current
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