Electronic Devices and Circuits MCQs
Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.
In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.
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Electronic Devices and Circuits MCQs | Page 45 of 82
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S1: The ฮฒ of a bipolar transistor reduces if the base width is increased.
S2: the ฮฒ of a bipolar transistor increases if the doping concentration in the base is increased.
Which one of the following is correct?
Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.