Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 45 of 82

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Q441.
If 10 V is the peak voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit), then the maximum voltage on the reverse biased diode will be
Discuss
Answer: (c).10 V
Q442.
In energy band diagram of p type semiconductor the acceptor energy level is
Discuss
Answer: (c).slightly above valence band
Discuss
Answer: (b).d.c. load voltage and r.m.s. load voltage
Q444.
When the gate terminal of MOSFET is positive, it is said to operate in
Discuss
Answer: (c).enhancement mode
Q445.
Assertion (A): In a Schottky diode the reverse recovery time is almost zero.

Reason (R): A Schottky diode has aluminium silicon junction.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (c).drain current and VDS for different values of VGS
Discuss
Answer: (a).high thermal conductivity and high melting point
Q448.
A JFET behaves as a constant current source when
Discuss
Answer: (d).VGS is more than pinch off voltage
Q449.
The electron and hole concentration in a intrinsic semiconductor are ni and Pi respectively when doped with a P type material, these change to n and P, respectively. Then
Discuss
Answer: (d).nP = ni Pi
Q450.
The energy to cause thermionic emission is supplied by heating the cathode.
Discuss
Answer: (a).True