Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 42 of 82

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Discuss
Answer: (c).sharp breakdown occurs at low reverse voltage
Q412.
Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?
Discuss
Answer: (b).NPN silicon transistor
Discuss
Answer: (a).mostly in the Pโบ region
Q414.
An increase of reverse voltage decreases the junction capacitance.
Discuss
Answer: (a).True
Q415.
The maximum forward current in case of signal diode is in the range of
Discuss
Answer: (c).few milli amperes
Q416.
On which of the following effect do thermocouples work?
Discuss
Answer: (b).Seeback effect
Q417.
Which of the following constitutes an active component?
Discuss
Answer: (a).Semiconductor device
Q418.
Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode?

1. It has low saturation current.
2. It has high value of cut in voltage.
3. It can withstand large reverse voltage.
4. When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions.

Select the answer using the given below
Discuss
Answer: (b).1, 2, 3, 4
Q419.
Assertion (A): Hall effect is used to find the type of semiconductor.

Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q420.
When a p-n junction is forward biased. The width of depletion layer decreases.ฯ€
Discuss
Answer: (a).True