Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 43 of 82

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Q421.
In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?
Discuss
Answer: (d).Three phase full wave rectifier
Discuss
Answer: (b).the majority carriers in both p and n materials are driven toward the junction.
Q423.
Consider the following statements about conditions that make a metal semiconductor contact rectifying

1. N type semiconductor with work function ฯ†s more than work function ฯ†M of metal
2. N type semiconductor with work function ฯ†s less than work function ฯ†M of metal
3. P type semiconductor with work function ฯ†s more than work function ฯ†M of metal
4. P type semiconductor with work function ฯ†s less than work function ฯ†M of metal

Of these statements
Discuss
Answer: (a).1 and 3 are correct
Q424.
Silicon diodes have __________ reverse resistance than germanium diodes.
Discuss
Answer: (b).a much larger
Q425.
The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on
Discuss
Answer: (b).wavelength of the incident radiation
Discuss
Answer: (d).potential barrier is raised
Discuss
Answer: (d).It explain all the regions of the device characteristics
Discuss
Answer: (c).800 to 1300 m-ohm-cm
Q429.
Which of the following is anti-ferromagnetic material?
Discuss
Answer: (d).All of the above
Q430.
Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode.

Reason (R): A PIN diode has an intrinsic layer between p and n regions.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A