Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 41 of 82

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Q401.
In bipolar transistors dc current gain is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Q402.
Which is correct for a vacuum triode?

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Discuss
Answer: (b).Zener diode
Q404.
To avoid thermal runaway in the design of an analog circuit, the operating point of the BJT should be such that it satisfies the condition.

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Discuss
Answer: (a).VGS = 0
Q406.
A potential difference is developed across a current carrying metal strip when the strip is placed in a transverse magnetic field. The above effect is known as
Discuss
Answer: (d).Hall's effect
Discuss
Answer: (c).sharp breakdown occurs at low reverse voltage
Q408.
Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?
Discuss
Answer: (b).NPN silicon transistor
Discuss
Answer: (a).mostly in the Pโบ region
Q410.
An increase of reverse voltage decreases the junction capacitance.
Discuss
Answer: (a).True