Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 41 of 82

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Q401.
Highest resistivity of the following is
Discuss
Answer: (a).nichrome
Discuss
Answer: (d).metal film resistors
Discuss
Answer: (d).IC < ฮฒIB
Q404.
When a semiconductor bar is heated at one end, a voltage across the bar is developed. If the heated is positive the semiconductor is
Discuss
Answer: (d).highly degenerate
Discuss
Answer: (a).during the entire diffusion
Q406.
The forbidden energy gap for silicon is
Discuss
Answer: (b).1.12 eV
Q407.
In energy band diagram of n type semiconductor, the donor energy level is
Discuss
Answer: (d).slightly below conduction band
Q408.
For an n-channel JEFT having drain source voltage constant if the gate source voltage is increased (more negative) pinch off would occur for
Discuss
Answer: (c).zero drain current
Discuss
Answer: (a).VGS = 0
Q410.
A potential difference is developed across a current carrying metal strip when the strip is placed in a transverse magnetic field. The above effect is known as
Discuss
Answer: (d).Hall's effect