Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 38 of 82

Discover more Topics under Electronics and Communication Engineering

Q371.
In a triode the potential of grid (with respect to cathode) is usually
Discuss
Answer: (b).negative
Q372.
Assertion (A): Hall effect is used to find the type of semiconductor.

Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q373.
When a p-n junction is forward biased. The width of depletion layer decreases.ฯ€
Discuss
Answer: (a).True
Q374.
In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?
Discuss
Answer: (d).Three phase full wave rectifier
Discuss
Answer: (b).the majority carriers in both p and n materials are driven toward the junction.
Q376.
Consider the following statements about conditions that make a metal semiconductor contact rectifying

1. N type semiconductor with work function ฯ†s more than work function ฯ†M of metal
2. N type semiconductor with work function ฯ†s less than work function ฯ†M of metal
3. P type semiconductor with work function ฯ†s more than work function ฯ†M of metal
4. P type semiconductor with work function ฯ†s less than work function ฯ†M of metal

Of these statements
Discuss
Answer: (a).1 and 3 are correct
Q377.
Silicon diodes have __________ reverse resistance than germanium diodes.
Discuss
Answer: (b).a much larger
Q378.
The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on
Discuss
Answer: (b).wavelength of the incident radiation
Discuss
Answer: (d).potential barrier is raised
Discuss
Answer: (d).It explain all the regions of the device characteristics