Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 33 of 82

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Discuss
Answer: (b).minority carriers
Q322.
Consider the following statements:

1. Acceptor level lies close the valence band.
2. Donor level lies close to the valence band.
3. n type semiconductor behaves as an insulator at 0 K.
4. p type semiconductor behaves as an insulator at 0 K.

Of these statements:
Discuss
Answer: (c).1 and 4 are correct
Q323.
If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then
Discuss
Answer: (d).both majority and minority carrier densities double
Q324.
Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

Reason (R): Diffusion of carriers occurs in semiconductors.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q325.
Consider the following statements about diamagnetic material and diamagnetism.

1. The materials have negative magnetic susceptibility.
2. At very low temperature diamagnetic materials.

Which of the statements given above is/are correct?
Discuss
Answer: (a).1 only
Discuss
Answer: (a).coating the cathode ray by an active materials
Discuss
Answer: (d).silver, copper, gold, aluminium
Discuss
Answer: (a).ID and VGS for different value of VDS
Q329.
The resistivity of intrinsic semiconductor material is about
Discuss
Answer: (d).1 ohm-m
Q330.
Which of the following exhibits negative resistance in a portion of its characteristics?
Discuss
Answer: (a).Tunnel diode