Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 47 of 82

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Q461.
In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap and one of the ends of the secondary. The maximum voltage across the reverse biased diode will be
Discuss
Answer: (a).100 V
Q462.
Consider the following statements.
The functions of an oxide layer in an IC device is to

1. mask against diffusion or ion implant
2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer

Of these statements, which are true.
Discuss
Answer: (d).1, 2, 4
Q463.
The forbidden energy gap for germanium is
Discuss
Answer: (c).0.72 eV
Q464.
If the gate of JFET is reverse biased, the width of depletion region
Discuss
Answer: (d).is more near the drain
Discuss
Answer: (b).is electrically neutral
Discuss
Answer: (b).IC > bIB
Q467.
An inductor filter has a ripple that __________ with load resistance and consequently is used only with relatively __________ load currents.
Discuss
Answer: (d).increases, high
Discuss
Answer: (c).both the junctions are reverse biased
Q469.
Introducing a resistor in the emitter of a common amplifier stabilizes the d.c. operating point against variations in
Discuss
Answer: (c).both temperature and ฮฒ
Q470.
If the atomic number of germanium is 32, the number of electrons in the outer most shell will be

a.

2

b.

3

c.

4

d.

6

Discuss
Answer: (c).4