Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 47 of 82

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Q461.
Thermal runaway is not possible in FET, because as the temperature of FET increases.
Discuss
Answer: (b).the transconductance increases
Discuss
Answer: (a).Intrinsic : number of electrons = number of holes
Q463.
The effect of a finite gain of operational amplifier used in an integrator is that
Discuss
Answer: (b).slope of the O/P will varied with time
Q464.
The ripple factor from a capacitor filter __________ as the load resistance __________ .
Discuss
Answer: (b).decreases, increases
Q465.
Of the various capacitances associated with a junction transistor the gain bandwidth product is affected to maximum extend by
Discuss
Answer: (d).base emitter diffusion capacitance
Q466.
Choose proper substitutes for x and y to make the following statement correct.
Tunnel diode, Avalanche photodiode are operated in x bias and y bias respectively.
Discuss
Answer: (c).x : Forward, y : Reverse
Q467.
Assertion (A): When a zener diode breakdown, occurs the voltage across it is constant.

Reason (R): The upper limit of zener current is determined by power handling capacity.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q468.
Consider the following statements

1. An iron cored choke is a nonlinear device.
2. A carbon resistor kept in a sunlight is a time - invariant and passive device.
3. A dry cell is a time - varying and active device.
4. An air capacitor is a time - invariant and passive device

Of these statements
Discuss
Answer: (a).1, 2, 3 and 4 are correct
Q469.
If 10 V is the peak voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit), then the maximum voltage on the reverse biased diode will be
Discuss
Answer: (c).10 V
Q470.
In energy band diagram of p type semiconductor the acceptor energy level is
Discuss
Answer: (c).slightly above valence band