Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 48 of 82

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Q471.
From an n channel JFET for VDS constant and if VGS is made more negative, pinch off would occur at
Discuss
Answer: (c).zero drain current
Discuss
Answer: (d).transportation factor decreases and a decreases
Q473.
The process of deliberately adding impurity to a semi-conductor material is called
Discuss
Answer: (d).doping
Discuss
Answer: (a).all quantum states with E less than EF will be occupied at T = 0
Q475.
The range of life time carriers (electrons and holes) is
Discuss
Answer: (c).1 nano sec to hundreds of ฮผs
Q476.
In the forward blocking region of a silicon, controlled rectifier, the SCR is
Discuss
Answer: (a).in the off-state
Q477.
Which of the following is a passive component?
Discuss
Answer: (c).Capacitors
Q478.
Greatest mobility can be expected in case of
Discuss
Answer: (c).electrons
Q479.
An enhancement mode MOSFET is off when the gate voltage is
Discuss
Answer: (c).less than threshold value
Q480.
When atoms are held together by the sharing of valence electrons
Discuss
Answer: (c).they form a covalent bond