Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 51 of 82

Discover more Topics under Electronics and Communication Engineering

Discuss
Answer: (d).a range of energies corresponding to the energies of the free electrons
Q502.
If an additional two diodes were used to connect the 1 kW load across a bridge rectifier circuits, utilizing the full secondary of the transformer, how much d.c. power could be delivered using a transformer with the rating of 105 VA?
Discuss
Answer: (c).85 W
Q503.
In an n channel JFET, VGS = VGS(off). Then
Discuss
Answer: (a).ID is zero
Q504.
Varactor diode is forward biased when it is used.
Discuss
Answer: (b).False
Discuss
Answer: (b).high concentration of donors below the contact
Q506.
The impurity added to extrinsic semiconductor is of the order of
Discuss
Answer: (b).1 in 1000
Q507.
For a BJT, avalanche multiplication factor depends on
Discuss
Answer: (b).VCB
Q508.
The impurity commonly used for realizing the base region of a n-p-n transistor is
Discuss
Answer: (c).boron
Q509.
Assertion (A): In CE connection of n-p-n transistor. VCE is positive.

Reason (R): In BJT, the base collector junction is reverse biased.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q510.
Assertion (A): Tunnel diode is used in many pulse and digital circuits.

Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A