Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 54 of 82

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Q531.
The addition of n type impurity to intrinsic material creates allowable energy levels.
Discuss
Answer: (a).slightly below conduction band
Q532.
Which of the following elements act as donor impurities?

1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium

Select the correct answer using the codes given below:
Discuss
Answer: (d).1, 4, 5
Q533.
Which of the following material can be used in cable shields?
Discuss
Answer: (d).Lead
Discuss
Answer: (b).1.6 x 10¯¹โน coulomb
Discuss
Answer: (d).semiconductor band gap and gate current respectively
Discuss
Answer: (a).the conductivity of silicon will be less than that of germanium at room temperature
Q537.
Assertion (A): The resistivity of intrinsic semiconductor decreases with increase in temperature.

Reason (R): The forbidden gap decreases with increase in temperature.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q538.
Before doping the semiconductor material is
Discuss
Answer: (d).purified
Q539.
The atomic number of silicon is 14. It can be therefore concluded that
Discuss
Answer: (d).all of the above
Q540.
X-rays cannot penetrate through a thick sheet of
Discuss
Answer: (c).lead