Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

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Electronic Devices and Circuits MCQs | Page 54 of 82

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Q531.
The depletion layer width of Junction

a.

decreases with light doping

b.

is independent of applied voltage

c.

is increased under reverse bias

d.

increases with heavy doping

Discuss
Answer: (c).is increased under reverse bias
Q532.
Forbidden energy gap in germanium at 0 K is about

a.

10 eV

b.

5 eV

c.

2 eV

d.

0.78 eV

Discuss
Answer: (d).0.78 eV
Q533.
Light dependent resistors are

a.

highly doped semiconductor

b.

intrinsic semiconductor

c.

lightly doped semiconductor

d.

either (a) or (c)

Discuss
Answer: (c).lightly doped semiconductor
Q534.
For a NPN bipolar transistor, what is the main stream of current in the base region?

a.

Drift of holes

b.

Diffusion of holes

c.

Drift of electrons

d.

Diffusion of electrons

Discuss
Answer: (b).Diffusion of holes
Q535.
Assertion (A): A VMOS can handle much larger current than other field effect transistors.

Reason (R): In a VMOS the conducting channel is very narrow.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (c).A is true but R is false
Q536.
In monolithic ICs, all the components are fabricated by

a.

diffusion process

b.

oxidation

c.

evaporation

d.

none

Discuss
Answer: (a).diffusion process
Q537.
Which one of the following is not a characteristic of a ferroelectric material?

a.

High dielectric constant

b.

No hysteresis

c.

Ferroelectric characteristic only above the curie point

d.

Electric dipole moment

Discuss
Answer: (c).Ferroelectric characteristic only above the curie point
Q538.
In case of photo conductor for germanium when forbidden energy gap is 0.72 eV, the critical wavelength for intrinsic excitation will be

a.

1.43 m

b.

1.43 mm

c.

1.73 mm

d.

1.73 x 10¹² m

Discuss
Answer: (c).1.73 mm
Q539.
Intrinsic concentration of charge carriers in a semiconductor varies as

a.

T

b.

T²

c.

T³

d.

T¯²

Discuss
Answer: (c).T³
Q540.
The dynamic resistance of a forward biased p-n diode

a.

varies inversely with current

b.

varies directly with current

c.

is constant

d.

is either constant or varies directly with current

Discuss
Answer: (a).varies inversely with current
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