Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 52 of 82

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Q511.
For a BJT, avalanche multiplication factor depends on
Discuss
Answer: (b).VCB
Q512.
The impurity commonly used for realizing the base region of a n-p-n transistor is
Discuss
Answer: (c).boron
Q513.
Assertion (A): In CE connection of n-p-n transistor. VCE is positive.

Reason (R): In BJT, the base collector junction is reverse biased.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q514.
Assertion (A): Tunnel diode is used in many pulse and digital circuits.

Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (b).the atomic magnetic moments are parallel
Q516.
Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?
Discuss
Answer: (a).Hartley oscillator
Discuss
Answer: (c).given by ฯƒ1 = eni (ฮผp + ฮผn)
Q518.
At a P-N junction, the potential barrier is due to the charges on either side of the junction, which consists of
Discuss
Answer: (a).fixed donor and acceptor ions
Q519.
In a vacuum triode ฮผ = rpgm.
Discuss
Answer: (a).True
Q520.
The material which has zero temperature coefficient of resistance is
Discuss
Answer: (a).manganin