Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 52 of 82

Discover more Topics under Electronics and Communication Engineering

Q511.
If a sample of Ge and a sample of Si have the same impurity density are kept at room temperature

a.

both will have equal value of resistivity

b.

both will have equal - ve of resistivity

c.

resistivity of germanium will be higher than that of silicon

d.

resistivity of silicon will be higher than of Ge

Discuss
Answer: (d).resistivity of silicon will be higher than of Ge
Q512.
Photoelectric emitters in photo tubes are generally made of

a.

alkali metals

b.

metals

c.

semiconductors

d.

metal and semiconductors

Discuss
Answer: (a).alkali metals
Q513.
Assertion (A): Power transistors are more commonly of silicon npn type.

Reason (R): The fabrication of silicon npn transistors is easy.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q514.
In N-type semiconductor

a.

electrons are majority carriers while holes are minority carriers

b.

electrons are majority carriers while holes are majority carriers

c.

both electrons as well as holes are majority carriers

d.

both electrons as well as holes are minority carriers

Discuss
Answer: (a).electrons are majority carriers while holes are minority carriers
Q515.
The addition of n type impurity to intrinsic material creates allowable energy levels.

a.

slightly below conduction band

b.

slightly above conduction band

c.

slightly below valence band

d.

slightly above valence band

Discuss
Answer: (a).slightly below conduction band
Q516.
Which of the following elements act as donor impurities?

1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium

Select the correct answer using the codes given below:

a.

1, 2, 3

b.

1, 2, 4, 6

c.

3, 4, 5, 6

d.

1, 4, 5

Discuss
Answer: (d).1, 4, 5
Q517.
Which of the following material can be used in cable shields?

a.

Copper

b.

Aluminium

c.

Cast iron

d.

Lead

Discuss
Answer: (d).Lead
Q518.
The charge of an electron is

a.

1.6 x 10¯¹⁷ coulomb

b.

1.6 x 10¯¹⁹ coulomb

c.

1.6 x 10¯²¹ coulomb

d.

1.6 x 10¯²³ coulomb

Discuss
Answer: (b).1.6 x 10¯¹⁹ coulomb
Q519.
The on voltage and forward breakover voltage of an SCR depend on

a.

gate current alone

b.

band gap of semiconductor alone

c.

gate current and semiconductor band gap respectively

d.

semiconductor band gap and gate current respectively

Discuss
Answer: (d).semiconductor band gap and gate current respectively
Q520.
EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that

a.

the conductivity of silicon will be less than that of germanium at room temperature

b.

the conductivity of silicon will be more than that of germanium at room temperature

c.

the conductivity of two will be same at 60°C

d.

the conductivity of two will be same at 100°C

Discuss
Answer: (a).the conductivity of silicon will be less than that of germanium at room temperature
Page 52 of 82