Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 17 of 82

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Q161.
Assertion (A): When reverse voltage across a p-n junction is increased, the junction capacitance decreases.

Reason (R): Capacitance of any layer is inversely proportional to thickness.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (b).number of free electrons is much greater than the number of holes
Q163.
Mobility of electrons and holes are equal.
Discuss
Answer: (b).False
Q164.
Which of the following is basically a voltage controlled capacitance?
Discuss
Answer: (c).Varactor diode
Q165.
When the i-v curve of a photodiode passes through origin the illumination is
Discuss
Answer: (c).zero
Q166.
An n type silicon bar 0.1 cm long and 100 ฮผm² in cross-sectional area has a majority carrier concentration of 5 x 10²แดผ/m³ and the carrier mobility is 0.13 mแดผ/V-s at 300k. If the charge of an electron is 1.6 x 10¯¹โน coulomb, then the resistance of the bar is
Discuss
Answer: (c).10¯¹ ohm
Q167.
The threshold voltage of a MOSFET can be lowered by

1. using thin gate oxide
2. reducing the substrate concentration
3. increasing the substrate concentration.

Of the above statement
Discuss
Answer: (c).1 and 3 are correct
Q168.
In which device does the extent of light controls the conduction
Discuss
Answer: (d).photo sensitive device
Discuss
Answer: (c).a voltage variable capacitance
Discuss
Answer: (d).dielectric strength, flash point and viscosity