Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 17 of 82

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Q161.
If the drift velocity of holes under a field gradient of 100 V/m in 5 m/s, their mobility (in SI units) is

a.

0.05

b.

0.5

c.

50

d.

500

Discuss
Answer: (a).0.05
Q162.
In a bipolar transistor

a.

recombination in base regions of both n-p-n and p-n-p transistor is low

b.

recombination in base regions of both n-p-n and p-n-p transistors is high

c.

recombination in base region of n-p-n transistor is low but that in p-n-p transistor is high

d.

recombination in base region of p-n-p transistor is low but that in n-p-n transistor is high

Discuss
Answer: (a).recombination in base regions of both n-p-n and p-n-p transistor is low
Q163.
If for a silicon n-p-n transistor, the base to emitter voltage (VBE) is 0.7 V and the collector to base voltage VCB is 0.2 Volt, then the transistor is operating in the

a.

normal active mode

b.

saturation mode

c.

inverse active mode

d.

cut off mode

Discuss
Answer: (a).normal active mode
Q164.
The number of doped regions in a bipolar junction transistor is

a.

1

b.

2

c.

3

d.

4

Discuss
Answer: (c).3
Q165.
Donor energy level is n type semiconductor is very near valence band.

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (b).False
Q166.
GaAs has an energy gap 1.43 eV the optical cut off wavelength of GaAs would lie in the

a.

visible region of the spectrum

b.

infrared region of the spectrum

c.

ultraviolet region of the spectrum

d.

for ultraviolet region of the spectrum

Discuss
Answer: (b).infrared region of the spectrum
Q167.
The breakdown voltage in a zener diode

a.

is almost constant

b.

is very small

c.

may destroy the diode

d.

decreases with increase in current

Discuss
Answer: (a).is almost constant
Q168.
A varactor diode is used for

a.

tuning

b.

rectification

c.

amplification

d.

rectification and amplification

Discuss
Answer: (a).tuning
Q169.
One eV = 1.602 x 10¯¹⁹ joules.

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (a).True
Q170.
Assertion (A): When VDS is more than rated value the drain current in a JFET is very high.

Reason (R): When VDS is more than rated value, avalanche breakdown occurs.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
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