Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 12 of 82

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Q111.
For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will
Discuss
Answer: (a).remain unchanged
Q112.
Which of the following is used for generating time varying wave forms?
Discuss
Answer: (d).UJT
Q113.
Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 10¹² cm¯³. Density of electrons = 8 x 10¹³ cm¯³, mobility of conduction electron = 2.3 x 10โด cm²/ V-sec and mobility of holes = 100 cm²/V-sec.
Discuss
Answer: (b).0.34 ฮฉ-m
Q114.
The static characteristic of an adequately forward biased P-n junction is a straight line, if the plot is of __________ Vs โ†’ versus
Discuss
Answer: (b).log I Vs V
Discuss
Answer: (a).ID, IS and IG are considered positive when flowing into the transistor
Q116.
The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 10¹โถ/m³. If after doping, the number of majority carriers is 5 x 10²แดผ/m³. The minority carrier density is
Discuss
Answer: (a).4.5 x 10¹¹/m³
Q117.
A diode is operating in forward region and the forward voltage and current are v = 3 + 0.3 sin ฯ‰t (volts) and i = 5 + 0.2 sin ฯ‰t (mA). The average power dissipated is
Discuss
Answer: (b).about 15 mW
Discuss
Answer: (a).Holes exist in conductors as well as semiconductors
Discuss
Answer: (b).wave length of incident radiation is less than threshold value
Q120.
The reverse saturation current of a diode does not depend on temperature.
Discuss
Answer: (b).False