Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 12 of 82

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Discuss
Answer: (b).intensity of incident radiation
Q112.
Assertion (A): A p-n junction has high resistance in reverse direction.

Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q113.
The drain characteristics of JFET in operating region, are
Discuss
Answer: (b).almost flat
Discuss
Answer: (b).the forbidden energy gap in silicon and germanium decrease
Q115.
When a reverse bias is applied to a p-n junction, the width of depletion layer.
Discuss
Answer: (b).increases
Q116.
The Hall constant in Si bar is given by 5 x 103 cm³/ coulomb, the hole concentration in the bar is given by
Discuss
Answer: (b).1.25 x 1015/cm³
Q117.
Which of the following devices has a silicon dioxide layer?
Discuss
Answer: (d).MOSFET
Q118.
For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about
Discuss
Answer: (b).250 mW
Q119.
The concentration of minority carriers in a semiconductor depends mainly on
Discuss
Answer: (b).temperature
Q120.
Which of the following has highest conductivity?
Discuss
Answer: (a).Silver