Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 11 of 82

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Q101.
In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be

a.

0.5 eV above valence band

b.

0.28 eV above valence band

c.

0.1 eV above valence band

d.

below the valence band

Discuss
Answer: (b).0.28 eV above valence band
Q102.
In an n-p-n transistor, the majority carriers in the base are

a.

electrons

b.

holes

c.

both holes and electrons

d.

either holes or electrons

Discuss
Answer: (a).electrons
Q103.
An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is

a.

0 to 200 ฮฉ

b.

200 - 400 ฮฉ

c.

200 ฮฉ and above

d.

400 ฮฉ and above

Discuss
Answer: (d).400 ฮฉ and above
Q104.
The number of doped regions in PIN diode is

a.

1

b.

2

c.

3

d.

1 or 2

Discuss
Answer: (b).2
Q105.
A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

a.

30 pA

b.

40 pA

c.

50 pA

d.

60 pA

Discuss
Answer: (b).40 pA
Q106.
In a bipolar transistor the barrier potential

a.

0

b.

a total of 0.7 V

c.

0.7 V across each depletion layer

d.

0.35 V

Discuss
Answer: (c).0.7 V across each depletion layer
Q107.
Crossover distortion behaviour is characteristic of

a.

class A O/P stage

b.

class B O/P stage

c.

class AB output stage

d.

common pulse O/P state

Discuss
Answer: (b).class B O/P stage
Q108.
If aac for transistor is 0.98 then ฮฒac is equal to

a.

51

b.

49

c.

47

d.

45

Discuss
Answer: (b).49
Q109.
Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q110.
In an n-p-n transistor biased for operation in forward active region

a.

emitter is positive with respect to base

b.

collector is positive with respect to base

c.

base is positive with respect to emitter and collector is positive with respect to base

d.

none of the above

Discuss
Answer: (c).base is positive with respect to emitter and collector is positive with respect to base
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