Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 9 of 82

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Q81.
Calculate the stability factor and change in IC from 25°C to 100°C for, Ξ² = 50, RB/ RE = 250, Ξ”IC0 = 19.9 nA for emitter bias configuration.

a.

42.53, 0.85 ΞΌA

b.

40.91, 0.58 ΞΌA

c.

40.91, 0.58 ΞΌA

d.

41.10, 0.39 ΞΌA

Discuss
Answer: (a).42.53, 0.85 ΞΌA
Q82.
Hall coefficient KH and charge density ρ are related as

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q83.
In p type semiconductors the conduction due to holes ( = Οƒp ) is (where e = charge on hole, ΞΌp is hole mobility and ρ is hole concentration)

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (c).C
Q84.
The Ebers-moll equation for IE in CB configuration is given by

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q85.
The small signal input impedance of a transistor whose output is shorted for the measuring signal is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q86.
The first and the last critical frequency of an RC driving point impedance function must respectively by

a.

a zero and a pole

b.

a zero and a zero

c.

a pole and a pole

d.

a pole and a zero

Discuss
Answer: (a).a zero and a pole
Q87.
The diffusion current is proportional to

a.

applied electric field

b.

concentration gradient of charge carrier

c.

square of the electric field

d.

cube of the applied electric field

Discuss
Answer: (b).concentration gradient of charge carrier
Q88.
The conductivity of materials found in nature ranges from 10⁹ ohm¯¹m¯¹ to nearly 10¹βΈ ohm¯¹ m¯¹ from this it can be concluded that the conductivity of silicon in ohm¯¹ cm¯¹ will be nearly

a.

0.5 x 10¯¹β΅

b.

0.5 x 10¯²¹

c.

0.5 x 10¯¹²

d.

0.5 x 10¯³

Discuss
Answer: (d).0.5 x 10¯³
Q89.
A periodic voltage has following value for equal time intervals changing suddenly from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms value of the waveform is

a.

31 V

b.

32 V

c.

insufficient data

d.

none of these

Discuss
Answer: (a).31 V
Q90.
Work function of oxide coated cathode is much lower than that of tungsten cathode.

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (a).True
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