Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 9 of 82

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Q81.
The small signal input impedance of a transistor whose output is shorted for the measuring signal is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q82.
The first and the last critical frequency of an RC driving point impedance function must respectively by
Discuss
Answer: (a).a zero and a pole
Discuss
Answer: (b).concentration gradient of charge carrier
Q84.
The conductivity of materials found in nature ranges from 10โน ohm¯¹m¯¹ to nearly 10¹โธ ohm¯¹ m¯¹ from this it can be concluded that the conductivity of silicon in ohm¯¹ cm¯¹ will be nearly
Discuss
Answer: (d).0.5 x 10¯³
Q85.
At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called
Discuss
Answer: (d).incremental conductance of diode
Discuss
Answer: (b).The maximum velocity of emission varies with the intensity of light
Discuss
Answer: (a).reverse bias exceeds the limiting value
Q88.
In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
Discuss
Answer: (c).used to reduce the parasitic capacitance
Q89.
Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Discuss
Answer: (c).base is positive with respect to emitter and collector is positive with respect to base