Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 9 of 82

Q81.
If aac for transistor is 0.98 then βac is equal to
Discuss
Answer: (b).49
Q82.
Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Discuss
Answer: (c).base is positive with respect to emitter and collector is positive with respect to base
Q84.
An increase in temperature increases the width of depletion layer.
Discuss
Answer: (b).False
Q85.
Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE = 250, ΔIC0 = 19.9 nA for emitter bias configuration.
Discuss
Answer: (a).42.53, 0.85 μA
Q86.
A periodic voltage has following value for equal time intervals changing suddenly from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms value of the waveform is
Discuss
Answer: (a).31 V
Q87.
Work function of oxide coated cathode is much lower than that of tungsten cathode.
Discuss
Answer: (a).True
Q88.
The word enhancement mode is associated with
Discuss
Answer: (b).MOSFET
Q89.
In which region of a CE bipolar transistor is collector current almost constant?
Discuss
Answer: (b).Active region
Discuss
Answer: (a).voltage regulator circuit