Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 9 of 82

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Q81.
The small signal input impedance of a transistor whose output is shorted for the measuring signal is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q82.
The first and the last critical frequency of an RC driving point impedance function must respectively by

a.

a zero and a pole

b.

a zero and a zero

c.

a pole and a pole

d.

a pole and a zero

Discuss
Answer: (a).a zero and a pole
Q83.
The diffusion current is proportional to

a.

applied electric field

b.

concentration gradient of charge carrier

c.

square of the electric field

d.

cube of the applied electric field

Discuss
Answer: (b).concentration gradient of charge carrier
Q84.
The conductivity of materials found in nature ranges from 10⁹ ohm¯¹m¯¹ to nearly 10¹⁸ ohm¯¹ m¯¹ from this it can be concluded that the conductivity of silicon in ohm¯¹ cm¯¹ will be nearly

a.

0.5 x 10¯¹⁵

b.

0.5 x 10¯²¹

c.

0.5 x 10¯¹²

d.

0.5 x 10¯³

Discuss
Answer: (d).0.5 x 10¯³
Q85.
At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called

a.

resistance of diode

b.

conductance of diode

c.

incremental resistance of diode

d.

incremental conductance of diode

Discuss
Answer: (d).incremental conductance of diode
Q86.
Which of the following statement about the photo electric emission is incorrect?

a.

The maximum velocity of emission varies with the frequency of incident light

b.

The maximum velocity of emission varies with the intensity of light

c.

The amount of photoelectric emission is directly proportional to the intensity of light

d.

The quantum yield depends on the frequency and not the intensity of incident light

Discuss
Answer: (b).The maximum velocity of emission varies with the intensity of light
Q87.
In a semiconductor avalanche breakdown occurs when

a.

reverse bias exceeds the limiting value

b.

forward bias exceeds the limiting value

c.

forward current exceeds the limiting value

d.

potential barrier is reduced to zero

Discuss
Answer: (a).reverse bias exceeds the limiting value
Q88.
In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is

a.

P⁺ -doped

b.

n⁺ -doped

c.

used to reduce the parasitic capacitance

d.

located in the emitter region

Discuss
Answer: (c).used to reduce the parasitic capacitance
Q89.
Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q90.
In an n-p-n transistor biased for operation in forward active region

a.

emitter is positive with respect to base

b.

collector is positive with respect to base

c.

base is positive with respect to emitter and collector is positive with respect to base

d.

none of the above

Discuss
Answer: (c).base is positive with respect to emitter and collector is positive with respect to base
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