Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 4 of 82

Discover more Topics under Electronics and Communication Engineering

Q31.
To avoid thermal runaway in the design of an analog circuit, the operating point of the BJT should be such that it satisfies the condition.

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Q32.
Hall coefficient KH and charge density ฯ are related as

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q33.
In p type semiconductors the conduction due to holes ( = ฯƒp ) is (where e = charge on hole, ฮผp is hole mobility and ฯ is hole concentration)

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (c).C
Q34.
The Ebers-moll equation for IE in CB configuration is given by

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q35.
The small signal input impedance of a transistor whose output is shorted for the measuring signal is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q36.
The dipole moment per unit volume as a function of E in the case of an insulator is given by (symbols have the usual meaning).

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q37.
The diode and the moving coil milliammeter of figure are assumed to be ideal. The meter reading is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q38.
The V-I characteristic of a semi-conductor diode is shown in figure. From this figure it can be concluded that
Discuss
Answer: (a).The diode is a silicon diode
Q39.
Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Discuss
Answer: (b).Schottky diode