Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 6 of 82

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Q51.
CE saturation resistance of n-p-n transistor is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Q52.
Typical values of h parameters at about 1 mA collector current for small signal audio amplifier in CE configuration are :

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Q53.
R.M.S. value of the waveform shown will be
Discuss
Answer: (c).7.07 V
Q54.
For a UJT if

R1 = Resistor from emitter to the base 1
R2 = Resistor from emitter to the base 2 and RBB = R1 + R2,

then the intrinsic stand off ratio (ฮท) is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q55.
The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of the electrons)

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Q56.
Which quantity controls the effectiveness of LED in emitting light?
Discuss
Answer: (d).Temperature
Q57.
The current gain of a BJT is
Discuss
Answer: (c).gm rp
Discuss
Answer: (b).a non-linear B-H behaviour
Discuss
Answer: (c).is due to thermally generated minority carriers
Q60.
In P-N junction, the region containing the uncompensated acceptor and donor ions is called
Discuss
Answer: (b).depletion region