Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 6 of 82

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Q51.
An amplifier without feedback has a voltage gain of 50, input resistance of 1 kฮฉ and output resistance of 2.5 kฮฉ. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is
Discuss
Answer: (a).1/11 kฮฉ
Q52.
As compared to an ordinary semiconductor diode, a Schottky diode
Discuss
Answer: (a).has lower cut in voltage
Q53.
Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
Reason (R): High reverse voltage causes Avalanche effect.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (c).has higher reverse saturation current and lower cut in voltage
Q55.
The fT of a BJT is related to its gm, Cฯ€ and Cฮผ as follows.

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q56.
Figure represents a
Discuss
Answer: (c).Varactor
Q57.
The O/P char, of a FET is given in the figure. In which region is the device biased for small signal amplification?
Discuss
Answer: (b).BC
Q58.
The current in a p-n junction diode with V volts applied in p region relative to n region (where I0 is reverse saturation current, m is ideality factor, k is Boltzmann's constant, T is absolute temp and q is charge on electron) is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q59.
In the BJT amplifier shown in the figure is the transistor is biased in the forward active region. Putting a capacitor across RE will
Discuss
Answer: (b).increase the voltage gain and decrease the I/P Impedance
Q60.
Figure shows small signal common base transistor circuit.The current source I and resistor R on the output side are

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D