Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 6 of 82

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Q51.
In p type semiconductors the conduction due to holes ( = ฯƒp ) is (where e = charge on hole, ฮผp is hole mobility and ฯ is hole concentration)

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (c).C
Q52.
The Ebers-moll equation for IE in CB configuration is given by

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q53.
The small signal input impedance of a transistor whose output is shorted for the measuring signal is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q54.
The first and the last critical frequency of an RC driving point impedance function must respectively by
Discuss
Answer: (a).a zero and a pole
Discuss
Answer: (b).concentration gradient of charge carrier
Q56.
The conductivity of materials found in nature ranges from 10โน ohm¯¹m¯¹ to nearly 10¹โธ ohm¯¹ m¯¹ from this it can be concluded that the conductivity of silicon in ohm¯¹ cm¯¹ will be nearly
Discuss
Answer: (d).0.5 x 10¯³
Discuss
Answer: (b).constant current region
Q58.
The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm²/sec. The diffusion length is
Discuss
Answer: (a).0.1 cm
Q59.
At room temperature the current in an intrinsic semiconductor is due to
Discuss
Answer: (d).holes and electrons
Q60.
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
Discuss
Answer: (b).False