Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 2 of 82

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Discuss
Answer: (c).Zener diode
Q12.
In the figure shows the circuits symbol of
Discuss
Answer: (d).NMOSFET
Q13.
The 6 V zener diode shown in figure has zero zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does not fall below 6 V is
Discuss
Answer: (b).80 ฮฉ
Q14.
For bipolar transistor

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Discuss
Answer: (b).output characteristics of p-n-p transistor (common base)
Q16.
In photo electric emission, the threshold frequency f0, work function Uw, and Planck's constant h are related as

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Discuss
Answer: (a).Tunnel diode
Q18.
The v-i characteristic of an element is shown in below figure the element is
Discuss
Answer: (d).non-linear, active, bilateral
Q19.
Diffusion constants Dp, Dn mobility ฮผp, ฮผn and absolute temperature T are related as

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q20.
The fT of a BJT is related to its gm, Cฯ€ and Cฮผ as follows.

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D