Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 5 of 82

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Q41.
Typical values of h parameters at about 1 mA collector current for small signal audio amplifier in CE configuration are :

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Q42.
R.M.S. value of the waveform shown will be

a.

3.53 V

b.

1 V

c.

7.07 V

d.

8.56 V

Discuss
Answer: (c).7.07 V
Q43.
For a UJT if

R1 = Resistor from emitter to the base 1
R2 = Resistor from emitter to the base 2 and RBB = R1 + R2,

then the intrinsic stand off ratio (ฮท) is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q44.
The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of the electrons)

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Q45.
Hall coefficient KH and charge density ฯ are related as

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q46.
In p type semiconductors the conduction due to holes ( = ฯƒp ) is (where e = charge on hole, ฮผp is hole mobility and ฯ is hole concentration)

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (c).C
Q47.
The Ebers-moll equation for IE in CB configuration is given by

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q48.
The small signal input impedance of a transistor whose output is shorted for the measuring signal is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q49.
The first and the last critical frequency of an RC driving point impedance function must respectively by

a.

a zero and a pole

b.

a zero and a zero

c.

a pole and a pole

d.

a pole and a zero

Discuss
Answer: (a).a zero and a pole
Q50.
The diffusion current is proportional to

a.

applied electric field

b.

concentration gradient of charge carrier

c.

square of the electric field

d.

cube of the applied electric field

Discuss
Answer: (b).concentration gradient of charge carrier
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