Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 15 of 82

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Q141.
Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n transistor will have better frequency response.

Reason (R): The electron mobility is higher than hole mobility.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q142.
In which of the following is the width of junction barrier very small?
Discuss
Answer: (d).Schottky diode
Q143.
If the reverse voltage across a p-n junction is increased three times, the junction capacitance
Discuss
Answer: (c).will decrease by an approximate factor of about 2
Q144.
Which of these has highly doped p and n region?
Discuss
Answer: (b).Tunnel diode
Discuss
Answer: (b).type of conductivity and concentration of charge carriers
Q146.
The units for transconductance are
Discuss
Answer: (d).siemens
Q147.
The mean free path of conduction electrons in copper is about 4 x 10¯โธ m. For a copper block, find the electric field which can give, on an average, 1 eV energy to a conduction electron
Discuss
Answer: (c).2.5 x 10โท V/m
Q148.
When a p-n-p transistor is properly biased to operate in active region the holes from emitter.
Discuss
Answer: (a).diffuse through base into collector region
Q149.
Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices.

Reason (R): Forbidden gap in silicon is more than that in germanium.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q150.
Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode.

Reason (R): When a diode is reverse biased surface leakage current flows.
Discuss
Answer: (d).A is false but R is true