Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 15 of 82

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Q141.
Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 1012 cm-3. Density of electrons = 8 x 1013 cm-3, mobility of conduction electron = 2.3 x 104 cm²/ V-sec and mobility of holes = 100 cm²/V-sec.
Discuss
Answer: (b).0.34 ฮฉ-m
Q142.
A semiconductor diode is biased in forward direction and carrying current I. The current due to holes in p material is
Discuss
Answer: (c).less than I
Discuss
Answer: (a).Cut off and saturation
Q144.
Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.

Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive device.
Discuss
Answer: (d).A is false but R is true
Q145.
Which of the following elements act as donor impurities?

1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium

Select the answer using the following codes :
Discuss
Answer: (d).2, 4 and 5
Discuss
Answer: (a).photo resistive device
Q147.
The derating factor for a BJT transistor is about
Discuss
Answer: (b).2.5 mW/°C
Q148.
An intrinsic silicon sample has 2 million free electrons. The number of holes in the sample is
Discuss
Answer: (a).2 million
Q149.
Assertion (A): When reverse voltage across a p-n junction is increased, the junction capacitance decreases.

Reason (R): Capacitance of any layer is inversely proportional to thickness.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (b).number of free electrons is much greater than the number of holes