Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 59 of 82

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Q581.
The density of states (i.e. number of states per eV per m³) in the conduction band for energy level E is proportional to
Discuss
Answer: (a).โˆšE
Q582.
A-P type material has an acceptor ion concentration of 1 x 10¹โถ per cm³. Its intrinsic carrier concentration is 1.48 x 10¹แดผ/ cm. The hole and electron mobilities are 0.05m²/V-sec and 0.13 m²/V-sec respectively calculate the resistivity of the material
Discuss
Answer: (b).1.25 ฮฉ-cm
Discuss
Answer: (c).the atomic nature of the semiconductor
Discuss
Answer: (b).zero signal IC and VCE
Q585.
For a junction FET in the pinch off region as the drain voltage is increased, the drain current
Discuss
Answer: (d).remains constant
Discuss
Answer: (d).surface potential is + ve and equal to twice the Fermi potential
Discuss
Answer: (b).raise +ve half cycle to the signal
Discuss
Answer: (d).any of the above
Discuss
Answer: (a).To provide high input resistance
Q590.
The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage
Discuss
Answer: (c).increase ฮฑ but decrease ฮฒ