Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 59 of 82

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Discuss
Answer: (b).germanium power transistor
Q582.
The function off an oxide layer in an IC device is to

1. mask against diffusion or ion implantation
2. insulate the surface electrically
3. increase the melting point of Si
4. produce a chemically stable protective layer
Discuss
Answer: (d).4, 1, 2
Q583.
The passage of current in an electrolyte is due to the movement of
Discuss
Answer: (d).ions
Q584.
In a CE bipolar transistor operating in active region, collector current is independent of
Discuss
Answer: (a).VCE
Discuss
Answer: (c).the atom becomes a positive ion
Q586.
A sample of N-type semiconductor has electron density of 6.25 x 10¹โธ/cm³ at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature the hole density works out to be
Discuss
Answer: (b).10โธ/cm³
Q587.
Mobility is directly proportional to Hall coefficient.
Discuss
Answer: (a).True
Discuss
Answer: (d).mobility of electrons is more than that of holes
Discuss
Answer: (a).lightly doped p substrate and highly doped n source and drain
Q590.
In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at
Discuss
Answer: (d).VDS less than 22 V