Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 61 of 82

Discover more Topics under Electronics and Communication Engineering

Discuss
Answer: (c).the atom becomes a positive ion
Q602.
A sample of N-type semiconductor has electron density of 6.25 x 10¹โธ/cm³ at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature the hole density works out to be
Discuss
Answer: (b).10โธ/cm³
Q603.
Mobility is directly proportional to Hall coefficient.
Discuss
Answer: (a).True
Discuss
Answer: (d).mobility of electrons is more than that of holes
Discuss
Answer: (a).lightly doped p substrate and highly doped n source and drain
Q606.
In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at
Discuss
Answer: (d).VDS less than 22 V
Q607.
The energy of one quantum of light equal to hf.
Discuss
Answer: (a).True
Q608.
For most metals, Fermi level EF is less than
Discuss
Answer: (d).10 eV
Discuss
Answer: (b).partially aligned antiparallel without exactly cancelling out sublattice magnetisation
Q610.
The permeability of soft iron can be increased by
Discuss
Answer: (c).alloying with cobalt