Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 65 of 82

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Q641.
Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10-8 amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V.
Discuss
Answer: (b).- 4.98 V, - 0.017 V
Q642.
An one sided abrupt junction has 10²¹/m³ of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10¯¹โน C, ฮตr =16, ฮตโ‚€ = 8.87 x 10¯¹² F/m) is
Discuss
Answer: (b).0.6 ฮผm
Discuss
Answer: (c).are produced when phosphorus is added as impurity to silicon
Discuss
Answer: (a).conductivity decreases with increase in temperature
Discuss
Answer: (b).is constant in reverse direction
Q646.
Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n transistor will have better frequency response.

Reason (R): The electron mobility is higher than hole mobility.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q647.
In which of the following is the width of junction barrier very small?
Discuss
Answer: (d).Schottky diode
Q648.
If the reverse voltage across a p-n junction is increased three times, the junction capacitance
Discuss
Answer: (c).will decrease by an approximate factor of about 2
Q649.
Which of these has highly doped p and n region?
Discuss
Answer: (b).Tunnel diode
Discuss
Answer: (b).type of conductivity and concentration of charge carriers