Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 65 of 82

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Q641.
Dielectric strength of which of the following material has the highest dielectric strength?
Discuss
Answer: (d).Joule effect
Q642.
Assertion (A): In p type semiconductor conduction is mainly due to holes.

Reason (R): In p type material the holes are majority carriers.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q643.
In common base configuration, the input characteristics of bipolar junction transistor are drawn between
Discuss
Answer: (a).VEB and IE
Q644.
Fermi level is the maximum energy that an electron can possess at 0 K.
Discuss
Answer: (a).True
Q645.
The voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit) is 25 volts. The maximum voltage on the reverse biased diode will be
Discuss
Answer: (c).25 V
Discuss
Answer: (d).depend on the concentration of the minor component in the alloy
Q647.
Which of the following insulating material is restricted to temperatures below 100°C?
Discuss
Answer: (d).Polythene
Discuss
Answer: (a).reduces gain
Q649.
Which of the following is not a semiconductor?
Discuss
Answer: (b).Calcium arsenide
Discuss
Answer: (c).the forbidden energy gap in silicon is higher than that in germanium