Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 70 of 82

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Q691.
Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value.

Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Discuss
Answer: (c).9.1 x 10¯³¹ kg
Discuss
Answer: (d).is a forward voltage below which the current is very small
Discuss
Answer: (c).50 Hz in the dc output of half wave and 100 Hz in the dc output of full wave
Q695.
For an insulating material, dielectric strength and dielectric loss should be respectively
Discuss
Answer: (c).high and low
Discuss
Answer: (c).negative temperature coefficient of resistance
Q697.
The I/P impedance (Zi) and the O/P impedance (Zo) of an ideal trans conductance (Voltage controlled current source) amplifier are
Discuss
Answer: (d).Zi = โˆž, Zo = โˆž
Q698.
The relation between thermionic emission current and temperature is known as
Discuss
Answer: (a).Richardson Dushman equation
Q699.
Assertion (A): When forward biased a p-n junction has low resistance.

Reason (R): The ratio dv/di is called dynamic resistance.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q700.
Assertion (A): JFET is a voltage controlled device.

Reason (R): The drain current can be controlled by controlling VGS.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A