Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 70 of 82

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Q691.
The ripple factor from a capacitor filter __________ as the load resistance __________ .

a.

decreases, decreases

b.

decreases, increases

c.

increases, decreases

d.

increases, increases

Discuss
Answer: (b).decreases, increases
Q692.
Of the various capacitances associated with a junction transistor the gain bandwidth product is affected to maximum extend by

a.

base collector parasitic capacitor

b.

base collector space charge layer capacitance

c.

base emitter space charge layer capacitance

d.

base emitter diffusion capacitance

Discuss
Answer: (d).base emitter diffusion capacitance
Q693.
Choose proper substitutes for x and y to make the following statement correct.
Tunnel diode, Avalanche photodiode are operated in x bias and y bias respectively.

a.

x : Reverse, y : Reverse

b.

x : Reverse, y : forward

c.

x : Forward, y : Reverse

d.

x : forward, y : forward

Discuss
Answer: (c).x : Forward, y : Reverse
Q694.
Assertion (A): When a zener diode breakdown, occurs the voltage across it is constant.

Reason (R): The upper limit of zener current is determined by power handling capacity.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q695.
Consider the following statements

1. An iron cored choke is a nonlinear device.
2. A carbon resistor kept in a sunlight is a time - invariant and passive device.
3. A dry cell is a time - varying and active device.
4. An air capacitor is a time - invariant and passive device

Of these statements

a.

1, 2, 3 and 4 are correct

b.

1, 2 and 3 are correct

c.

1, 2 and 4 are correct

d.

2 and 4 are correct

Discuss
Answer: (a).1, 2, 3 and 4 are correct
Q696.
If 10 V is the peak voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit), then the maximum voltage on the reverse biased diode will be

a.

20 V

b.

14.14 V

c.

10 V

d.

7.8 V

Discuss
Answer: (c).10 V
Q697.
In energy band diagram of p type semiconductor the acceptor energy level is

a.

in valence band

b.

in conduction band

c.

slightly above valence band

d.

slightly below conduction band

Discuss
Answer: (c).slightly above valence band
Q698.
Given a power supply filter circuit, what measurements must be made of determine percentage regulation

a.

current through and voltage across the capacitor

b.

d.c. load voltage and r.m.s. load voltage

c.

current through load and voltage across load resistance

d.

number of turns and gauge of secondary winding of transformer

Discuss
Answer: (b).d.c. load voltage and r.m.s. load voltage
Q699.
When the gate terminal of MOSFET is positive, it is said to operate in

a.

depletion mode

b.

conduction mode

c.

enhancement mode

d.

none of the above

Discuss
Answer: (c).enhancement mode
Q700.
Assertion (A): In a Schottky diode the reverse recovery time is almost zero.

Reason (R): A Schottky diode has aluminium silicon junction.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
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