Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 72 of 82

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Q711.
For an insulating material, dielectric strength and dielectric loss should be respectively
Discuss
Answer: (c).high and low
Discuss
Answer: (c).negative temperature coefficient of resistance
Q713.
The I/P impedance (Zi) and the O/P impedance (Zo) of an ideal trans conductance (Voltage controlled current source) amplifier are
Discuss
Answer: (d).Zi = โˆž, Zo = โˆž
Q714.
The relation between thermionic emission current and temperature is known as
Discuss
Answer: (a).Richardson Dushman equation
Q715.
Assertion (A): When forward biased a p-n junction has low resistance.

Reason (R): The ratio dv/di is called dynamic resistance.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q716.
Assertion (A): JFET is a voltage controlled device.

Reason (R): The drain current can be controlled by controlling VGS.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q717.
For a P-N junction diode, the current in reverse bias may be
Discuss
Answer: (d).few micro or nanoamperes
Q718.
An amplifier with resistive -ve feedback has two left poles in its open loop transfer function. The amplifier
Discuss
Answer: (b).will be stable for all frequencies
Q719.
Amplification of ultrasonic waves is possible in a piezoelectric semiconductor under applied electric field. The basic phenomenon involved is known as
Discuss
Answer: (c).acousto-electric interaction
Q720.
For a junction FET in the pinch off region, as the drain voltage is increased, the drain current
Discuss
Answer: (d).remains constant