Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 75 of 82

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Q741.
Determine the transistor capacitance of a diffused junction varicap diode of a reverse potential of 4.2 V if C(0) = 80 pf and VT = 0.7 V
Discuss
Answer: (a).42 pf
Q742.
At room temperature the barrier potential in a silicon diode is
Discuss
Answer: (c).0.7 V
Q743.
The cut in voltage of a diode is nearly equal to
Discuss
Answer: (c).barrier potential
Q744.
Assertion (A): In a BJT base current is very small.

Reason (R): In a BJT recombination in base region is high.
Discuss
Answer: (c).A is true but R is false
Q745.
A reverse voltage of 18 V is applied to a semiconductor diode. The voltage across the depletion layer is
Discuss
Answer: (d).18 V
Discuss
Answer: (b).10¯¹แดผ metre
Q747.
N-type silicon is obtained by doping silicon with
Discuss
Answer: (d).phosphorus
Discuss
Answer: (a).holes and electrons move away from the junction
Discuss
Answer: (d).resistivity of Si will be higher than of germanium
Discuss
Answer: (b).The energy levels of outer shell electrons are affected appreciably by the presence of other neighbouring atoms.