Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

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Electronic Devices and Circuits MCQs | Page 75 of 82

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Q741.
Determine the transistor capacitance of a diffused junction varicap diode of a reverse potential of 4.2 V if C(0) = 80 pf and VT = 0.7 V

a.

42 pf

b.

153.03 pf

c.

13.33 pf

d.

Data inadequate

Discuss
Answer: (a).42 pf
Q742.
At room temperature the barrier potential in a silicon diode is

a.

0.1 V

b.

0.3 V

c.

0.7 V

d.

1 V

Discuss
Answer: (c).0.7 V
Q743.
The cut in voltage of a diode is nearly equal to

a.

applied forward voltage

b.

applied reverse voltage

c.

barrier potential

d.

none of the above

Discuss
Answer: (c).barrier potential
Q744.
Assertion (A): In a BJT base current is very small.

Reason (R): In a BJT recombination in base region is high.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (c).A is true but R is false
Q745.
A reverse voltage of 18 V is applied to a semiconductor diode. The voltage across the depletion layer is

a.

0 V

b.

0.7 V

c.

about 10 V

d.

18 V

Discuss
Answer: (d).18 V
Q746.
The diameter of an atom is

a.

10¯โถ metre

b.

10¯¹แดผ metre

c.

10¯¹โต metre

d.

10¯²¹ metre

Discuss
Answer: (b).10¯¹แดผ metre
Q747.
N-type silicon is obtained by doping silicon with

a.

germanium

b.

aluminium

c.

boron

d.

phosphorus

Discuss
Answer: (d).phosphorus
Q748.
When a p-n junction is reverse biased

a.

holes and electrons move away from the junction

b.

holes and electrons move towards the junction

c.

holes move towards junction and electrons move away from junction

d.

holes move away from junction and electrons move towards junction

Discuss
Answer: (a).holes and electrons move away from the junction
Q749.
If a sample of germanium and a sample of Si have the impurity density and are kept at room temperature then

a.

both will have equal value of resistivity

b.

both will have equal -ve resistivity

c.

resistivity of germanium will be higher than that of silicon

d.

resistivity of Si will be higher than of germanium

Discuss
Answer: (d).resistivity of Si will be higher than of germanium
Q750.
When a large number of atoms are brought together to form a crystal

a.

the energy levels of inner shell electrons are affected appreciably by the presence of other neighbouring atoms.

b.

The energy levels of outer shell electrons are affected appreciably by the presence of other neighbouring atoms.

c.

the energy levels of both inner and outer shell electrons are affected appreciably by the presence of other neighbouring atoms.

d.

none of the above.

Discuss
Answer: (b).The energy levels of outer shell electrons are affected appreciably by the presence of other neighbouring atoms.
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