Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 75 of 82

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Q741.
In intrinsic semiconductor, the fermi level

a.

lies at the centre of forbidden energy gap

b.

is near the conduction band

c.

is near the valence band

d.

may be anywhere in the forbidden energy gap

Discuss
Answer: (a).lies at the centre of forbidden energy gap
Q742.
Electromagnetic waves transport

a.

energy only

b.

momentum only

c.

energy as well as momentum

d.

neither energy nor momentum

Discuss
Answer: (c).energy as well as momentum
Q743.
In a forward biased p-n junction current enters p material as hole current and leaves n material as electron current of the same magnitude.

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (a).True
Q744.
When P-N junction is in forward bias, by increasing the battery voltage

a.

current through P-N junction reduces

b.

current through P-N junction increases

c.

circuit resistance increases

d.

none of the above

Discuss
Answer: (b).current through P-N junction increases
Q745.
A semiconductor in its purest form called

a.

intrinsic semiconductor

b.

extrinsic semiconductor

c.

P-type semiconductor

d.

N-type semiconductor

Discuss
Answer: (a).intrinsic semiconductor
Q746.
Which of the following is an active device?

a.

Transformer

b.

Silicon controlled rectifier

c.

Electric bulb

d.

Loudspeaker

Discuss
Answer: (b).Silicon controlled rectifier
Q747.
Assertion (A): The forward dynamic resistance of p-n diode varies inversely with current.

Reason (R): The forward dynamic resistance of p-n diode varies with the operating voltage.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q748.
If E (i.e., available energy state) = EF(i.e., Fermi level), then probability that state E will be occupied is 0.5 for any temperature T.

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (a).True
Q749.
The output, V-I characteristics of an Enhancement type MOSFET has

a.

only an ohmic region

b.

only a saturation region

c.

an ohmic region at low voltage value followed by a saturation region at higher voltages

d.

an ohmic region at large voltage values preceded by a saturation region at lower voltages

Discuss
Answer: (c).an ohmic region at low voltage value followed by a saturation region at higher voltages
Q750.
Piezoelectric quartz crystal resonators find application where

a.

signal amplification is required

b.

rectification of the signal is required

c.

signal frequency control is required

d.

modulation of signal is required

Discuss
Answer: (b).rectification of the signal is required
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